document number: 94566 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 insulated ultrafast rectifier module, 200 a ufb200fa60p vishay semiconductors features ? two fully independent diodes ? ceramic fully insulated package (v isol = 2500 v ac ) ? ultrafast reverse recovery ? ultrasoft reverse recovery current shape ? low forward voltage ? optimized for power conver sion: welding and industrial smps applications ? industry standard outline ? plug-in compatible with other sot-227 packages ? easy to assemble ? direct mounting to heatsink ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description the ufb200fa60p insulated modules integrate two state of the art vishay semiconductors ultrafast recovery rectifiers in the compact, industry standard sot-227 package. the planar structure of the diodes , and the platinum doping life time control, provide an ultrasoft recovery current shape, together with the best over all performanc e, ruggedness, and reliability characteristics. these devices are thus intended for high frequency applications in which the switching energy is designed not to be a predominant portion of the total energy, such as in the output rectification stage of welding machines, smps, and dc-to-dc converters. thei r extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and emi/rfi. product summary v r 600 v i f(av) per module at t c = 92 c 200 a t rr 83 ns sot-227 absolute maximum ratings parameter s ymbol te s t condition s max. unit s cathode to anode voltage v r 600 v continuous forward current per diode i f t c = 85 c 126 a single pulse forwar d current per diode i fsm t c = 25 c 1000 maximum power dissip ation per module p d t c = 85 c 360 w rms isolation voltage v isol any terminal to case, t = 1 min 2500 v operating junction and storage temperatures t j , t stg - 55 to 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94566 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 ufb200fa60p vishay semiconductors insulated ultrafast rectifier module, 200 a electrical specifications (t j = 25 c unless otherwise specified) parameter s ymbol te s t condition s min. typ. max. unit s cathode to anode breakdown voltage v br i r = 100 a 600 - - v forward voltage v fm i f = 100 a - 1.46 1.78 i f = 200 a - 1.7 2.05 i f = 100 a t j = 125 c - 1.23 1.52 i f = 200 a - 1.5 1.78 reverse leakage current i rm v r = v r rated - 0.1 100 a t j = 175 c, v r = v r rated - 0.3 1.0 ma junction capacitance c t v r = 600 v - 80 - pf dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter s ymbol te s t condition s min. typ. max. unit s reverse recovery time t rr t j = 25 c i f = 50 a di f /dt = 200 a/s v r = 200 v - 83 108 ns t j = 125 c - 182 235 peak recovery current i rrm t j = 25 c - 7 10 a t j = 125 c - 18 22 reverse recovery charge q rr t j = 25 c - 290 540 nc t j = 125 c - 1595 2585 thermal - mechanical specifications parameter s ymbol te s t condition s min. typ. max. unit s junction to case, single leg conducting r thjc --0.5 c/w junction to case, both leg conducting - - 0.25 case to heatsink r thcs flat, greased surface - 0.05 - weight -30- g mounting torque - 1.3 - n m
document number: 94566 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 ufb200fa60p insulated ultrafast rectifier module, 200 a vishay semiconductors fig. 1 - typical forward voltage drop characteristics (per diode) fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per diode) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 1 10 100 1000 tj = 25c tj = 125c tj = 175c forward voltage drop - v f (v) instantaneous forward current - i f (a) reverse voltage - v r (v) reverse current - i r (a) 100 200 300 400 500 600 0.001 0.01 0.1 1 10 100 1000 25c 175c 125c reverse voltage - v r (v) junction capacitance - c t ( p f ) 10 100 1000 10 100 1000 t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 single pulse (thermal resistance) d = 0.2 d = 0.25 d = 0.33 d = 0.5 d = 0.75
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94566 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 ufb200fa60p vishay semiconductors insulated ultrafast rectifier module, 200 a fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r average forward current - i f(av) (a) allowable case temperature (c) 0 50 100 150 200 0 50 100 150 200 dc see note 1 square wave (d=0.50) 80% rated vr applied average power loss ( w ) average forward current - i f(av) (a) 0 255075100125150 0 50 100 150 200 250 rms limit dc d = 0.2 d = 0.25 d = 0.33 d = 0.5 d = 0.75 t rr (ns) di f /dt (a/s ) 0 0 0 1 0 0 1 50 100 150 200 250 if = 50a, 125c if = 50a, 25c vr = 200v q rr (nc) di f /dt (a/s ) 0 0 0 1 0 0 1 0 500 1000 1500 2000 2500 3000 3500 if = 50a, 125c if = 50a, 25c vr = 200v
document number: 94566 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 ufb200fa60p insulated ultrafast rectifier module, 200 a vishay semiconductors fig. 9 - typical stored current vs. di f /dt fig. 10 - reverse recovery parameter test circuit 0 0 0 1 0 0 1 0 10 20 30 40 if = 50a, 125c if = 50a, 25c vr = 200v i rr (a) di f /dt (a/s ) irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94566 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 ufb200fa60p vishay semiconductors insulated ultrafast rectifier module, 200 a fig. 11 - reverse recovery waveform and definitions ordering information table circuit configuration link s to related document s dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr 1 - ultrafast rectifier 2 - ultrafast pt diffused 3 - current rating (200 = 200 a) 4 - circuit configuration (2 separate diodes, parallel pin-out) 5 - package indicator (sot-227 standard isolated base) 6 - voltage rating (60 = 600 v) 7 - p = lead (pb)-free device code 5 13 24 67 uf b 200 f a 60 p 1 4 2 3
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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